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| 型号 | IPS12CN10L G |
| 厂商 | Infineon Technologies |
| 描述 | MOSFET N-CH 100V 69A TO251-3-11 |
| IPS12CN10L G PDF |  |
| 代理商 | IPS12CN10L G |
| 产品变化通告 | Product Discontinuation 26/Jul/2012 |
| 标准包装 | 1,500 |
| 系列 | OptiMOS™ |
| FET 型 | MOSFET N 通道，金属氧化物 |
| FET 特点 | 逻辑电平门 |
| 漏极至源极电压(Vdss) | 100V |
| 电流 - 连续漏极(Id) @ 25° C | 69A |
| 开态Rds（最大）@ Id, Vgs @ 25° C | 11.8 毫欧 @ 69A，10V |
| Id 时的 Vgs(th)（最大） | 2.4V @ 83µA |
| 闸电荷(Qg) @ Vgs | 58nC @ 10V |
| 输入电容 (Ciss) @ Vds | 5600pF @ 50V |
| 功率 - 最大 | 125W |
| 安装类型 | 通孔 |
| 封装/外壳 | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装 | PG-TO251-3 |
| 包装 | 管件 |
| 其它名称 | SP000311530 |
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